TSI4N60M datasheet, mosfet equivalent, Truesemi

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datasheet Download (Size : 228.67KB)

Features and benefits

* 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V
* Low gate charge ( typical 16nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved d.

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.

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