TSF8N60M datasheet, mosfet equivalent, Truesemi

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 801.77KB)

Features and benefits

* 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
* Gate charge (Typical 30nC)
* High ruggedness
* Fast switching
* 100% AvalancheTested
* Improved dv/dt capabilit.

Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited f.

Image gallery