TSF8N60M Key Features
- 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
- Gate charge (Typical 30nC)
- High ruggedness
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
TSF8N60M | N-Channel 650V Power MOSFET |