* 9.0A, 500V, RDS(on) = 0.80Ω @VGS = 10 V
* Low gate charge ( typical 30nC)
* Fast wsitching
* 100% avalanche tested
* Improved dv/dt capability {D .

This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pul.

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