* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.58Ω
* Ultra Low Gate Charge (typ. Qg = 9nC)
* 100% avalanche tested
* Rohs Compliant Absolute Maximum Ratings .

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts