TSD4N60M mosfet equivalent, n-channel mosfet.
* 2.8A,600V,Max.RDS(on)=2.50 Ω @ VGS =10V
* Low gate charge(typical 16nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv.
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.
Image gallery
TAGS
Download (Size : 338.89KB)