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TSA24N50M Datasheet Preview

TSA24N50M Datasheet

500V N-Channel MOSFET

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TSA24N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using True semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 24A, 500V, RDS(on) = 0.2@VGS = 10 V
- Low gate charge ( typical 90nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
GDS
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
S
TSA24N50M
500
24
15
96
±30
1150
24
29
4.5
290
2.33
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
http://www.truesemi.com
Typ
--
0.24
--
Max
0.43
--
40
Units
/W
/W
/W
Rev. 00 October . 2012




Truesemi

TSA24N50M Datasheet Preview

TSA24N50M Datasheet

500V N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to 25
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 12 A
VDS = 40 V, ID = 12 A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 24 A,
RG = 25
(Note 4, 5)
VDS = 400 V, ID = 24 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A
trr Reverse Recovery Time
VGS = 0 V, IS = 24 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.4mH, IAS = 24A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 24A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300us, Duty cycle 2%
5. Essentially independent of operating temperature
Min
500
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.5
--
--
--
--
--
0.16
15
3500
520
55
100
250
200
150
90
22
45
--
--
--
400
4.3
Max Units
-- V
-- V/
1
10
100
-100
uA
uA
nA
nA
4.0 V
0.2
-- S
-- pF
-- pF
-- pF
-- ns
-- ns
-- ns
-- ns
-- nC
-- nC
-- nC
24 A
96 A
1.4 V
-- ns
-- uC
http://www.truesemi.com
Rev. 00 October . 2012


Part Number TSA24N50M
Description 500V N-Channel MOSFET
Maker Truesemi
Total Page 6 Pages
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