* 18.0A,500V,Max.RDS(on)=0.31 Ω @ VGS =10V
* Low gate charge(typical 45nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved d.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts