TSA16N50M mosfet equivalent, n-channel mosfet.
* 16.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V
* Low gate charge(typical 45nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv.
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.
Image gallery
TAGS
Download (Size : 339.68KB)