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TriQuint Semiconductor

TGF4260-SCC Datasheet Preview

TGF4260-SCC Datasheet

9.6 mm HFET

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9.6 mm Discrete HFET
Product Data Sheet
March 31, 2003
TGF4260-SCC
Key Features and Performance
• 9600 µm x 0.5 µm HFET
• Nominal Pout of 37dBm at 6 GHz
• Nominal Gain of 9.5dB at 6 GHz
• Nominal PAE of 52% at 6 GHz
• Frequency Range: DC - 10.5 GHz
• Suitable for high reliability applications
• 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
Primary Applications
• Cellular Base Stations
• High-reliability space
• Military
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Description
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation.
Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.
Bond pad and backside metallization are gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes.
The TGF4260-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
1
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

TGF4260-SCC Datasheet Preview

TGF4260-SCC Datasheet

9.6 mm HFET

No Preview Available !

SYMBOL
VDS
VGS
PD
TCH
TSTG
TM
TABLE I
MAXIMUM RATINGS
Product Data Sheet
March 31, 2003
TGF4260-SCC
PARAMETER 1/
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Operating Channel Temperature
Storage Temperature
Mounting Temperature (30 seconds)
VALUE
12 V
0 to -5.0 Volts
6.8 W
150°C
-65 to 200°C
320°C
NOTES
2/
3/, 4/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under “Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “DC Probe Characteristics” is not implied. Exposure to maximum rated
conditions for extended periods may affect device reliability.
2/ When operated at this bias condition with a base plate temperature of 70 0C, the MTTF life is
reduced from 1.7 E+12 to 3 E+9 hours.
3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels
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4/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
2
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number TGF4260-SCC
Description 9.6 mm HFET
Maker TriQuint Semiconductor
Total Page 9 Pages
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