TGF4250-SCC hfet equivalent, 4.8 mm hfet.
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* Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 .
4800 µm x 0.5 µm FET Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in) Bias at 8 Volts, 384 mA Cellular B.
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm pow.
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