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TGF4250-SCC - 4.8 mm HFET

Description

The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation.

Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53% PAE.

Features

  • and Performance.
  • Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability.

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Datasheet Details

Part number TGF4250-SCC
Manufacturer TriQuint Semiconductor
File Size 385.91 KB
Description 4.8 mm HFET
Datasheet download datasheet TGF4250-SCC Datasheet

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Part Number Description
TGF4250-EEU 4.8 mm Discrete HFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • • • • Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications 4800 µm x 0.5 µm FET Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in) Bias at 8 Volts, 384 mA Cellular Base Stations High-reliability space Military Primary Applications www.DataSheet.net/ Description The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53% PAE.
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