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TGF4230-SCC - 1.2 mm HFET

Description

The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.

Features

  • and Performance.
  • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias at 8 Volts, 96 mA Primary.

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Datasheet Details

Part number TGF4230-SCC
Manufacturer TriQuint Semiconductor
File Size 281.87 KB
Description 1.2 mm HFET
Datasheet download datasheet TGF4230-SCC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias at 8 Volts, 96 mA Primary Applications • • • Cellular Base Stations High dynamic-range LNAs Military and Space Description www.DataSheet.net/ The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.
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