The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package.
The device’s ideal operating point is at a drain bias of 8 V and 100 mA.
| Part number | TGF2960-SD |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.20 MB |
| Description | 0.5 Watt GaAs HFET |
| Datasheet |
 TGF2960-SD Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| TGF2977-SM | RF Transistor | qorvo |
| TGF2021-08 | DC - 12 GHz Discrete power pHEMT | Tyco Electronics |
| TGF2023-2-01 | SiC HEMT | Qorvo |
| TGF2023-2-20 | 90 Watt Discrete Power GaN on SiC HEMT | TriQuint |
| TGF2023-2-20 | SiC HEMT | Qorvo |
| Part Number | Description |
|---|---|
| TGF2961-SD | 1 Watt GaAs HFET |
| TGF2018 | 180 um Discrete GaAs pHEMT |
| TGF2021-01 | DC-12 GHz Discrete Power pHEMT |
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04 | DC - 12 GHz Discrete power pHEMT |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
