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TriQuint Semiconductor

TGF2022-48 Datasheet Preview

TGF2022-48 Datasheet

Ku Band Discrete Power pHEMT

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DC - 20 GHz Discrete power pHEMT
Product Datasheet
September 7, 2007
TGF2022-48
Product Description
The TriQuint TGF2022-48 is a discrete
4.8 mm pHEMT which operates from
DC-20 GHz. The TGF2022-48 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-48 typically provides
> 37 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-48 appropriate for
high efficiency applications.
The TGF2022-48 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-48 has a protective
surface passivation layer providing
environmental robustness.
Key Features and Performance
Frequency Range: DC - 20 GHz
> 37 dBm Nominal Psat
58% Maximum PAE
45 dBm Nominal OIP3
13 dB Nominal Power Gain
Suitable for high reliability applications
4.8mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 360-600mA
(Under RF Drive, Id rises from 360mA to 1200mA)
Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
www.DataSheet.net/
Military
Base Stations
Broadband Wireless Applications
35
30
25
20
15
10
5
0
0
MSG
MAG
2 4 6 8 10 12 14 16
Frequency (GHz)
Lead-free and RoHS compliant
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
1
Rev
-Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

TGF2022-48 Datasheet Preview

TGF2022-48 Datasheet

Ku Band Discrete Power pHEMT

No Preview Available !

TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Product Datasheet
September 7, 2007
TGF2022-48
Value
12.5 V
-5V to 0V
2250 mA
56 mA
32 dBm
See note 3
150 °C
320 °C
-65 to 150 °C
Notes
2/
2/
2/
2/ 3/
4/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 17.3 (°C/W)
www.DataSheet.net/
4/ Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 °C, Nominal)
Symbol
Parameter
Idss Saturated Drain Current
Gm Transconductance
VP Pinch-off Voltage
VBGS
VBGD
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
Minimum
-
-
-1.5
-30
-30
Typical
1440
1800
-1
-
-
Maximum
-
-
-0.5
-8
-14
Unit
mA
mS
V
V
V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
2
Rev
-Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number TGF2022-48
Description Ku Band Discrete Power pHEMT
Maker TriQuint Semiconductor
Total Page 8 Pages
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