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* TGA4510 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: .

* LMDS Point-to-Point Base Stations Fixtured Measured Performance Bias Conditions: Vd = 6V, Id = 60 mA ± 5% 20 18 1.

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