TGA2902-SCC-SG Datasheet | TriQuint Semiconductor

Features and Performance 34 d Bm Midband Psat 26 d B Nominal Gain 8 d B Typical Return Loss 13 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25µm p HEMT Technology Bias Conditions: 7.5V, 650m A Package Dimensions: 9.4 x 6.4 x 1.8 mm (370 x 250 x 71 mils) Lead free and Ro HS pliant Preliminary Measured Performance Bias Conditions: VD = 7.5V, ID = 650m A 30 25 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 10 - Gain (d B) 0 -5 -10 -15 -20 Return Loss (d B) S21 S11 S22 Primary Applications - - VSAT Point to Point Frequency (GHz) 36 35 60 55 50 Output Power (d Bm) 34 33 32 31 30 29 28 12.5 P2d B Psat PAE@Psat 40 35 30 25 20 17.5 Frequency (GHz) PAE (%) Tri Quint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: .triquint. Product Data Sheet February 21, 2005 .. TABLE I MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value 8V -5V to 0V 1300 m A 18 m A 24 d Bm 6.15 W 150 C 220 0C -65 to 150 0C Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device binations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C When operated at this bias condition with a baseplate temperature of 70°C, the MTTF is reduced from 4.8E+6 to 1.0E+6 hours Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is remended that junction temperatures be maintained at the lowest possible levels. TABLE II THERMAL INFORMATION Parameter RΘJC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 7.5V ID = 650m A PDISS = 4.88W TBASE = 70°C TCH (q C) 132.3 R4JC (q C/W) 12.8...