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TGA2817-SM - GaN Power Amplifier

Datasheet Summary

Description

TriQuint’s TGA2817-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process.

Covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency.

Features

  • Frequency Range: 2.9.
  • 3.5 GHz.
  • Pout: > 48 dBm (at Pin = 24 dBm).
  • Large Signal Gain: > 24 dB (at Pin = 24 dBm).
  • PAE: > 54 % (at Pin = 24 dBm).
  • Bias: VD = 28 V, IDQ = 200 mA, VG =.
  • 2.8 V (Typ).
  • Package Dimensions: 7.00 x 7.00 x 0.85 mm General.

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Datasheet Details

Part number TGA2817-SM
Manufacturer TriQuint Semiconductor
File Size 588.66 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2817-SM Datasheet
Additional preview pages of the TGA2817-SM datasheet.

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Full PDF Text Transcription

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Applications • Military Radar • Commercial Radar • Wideband Amplifiers TGA2817-SM S-Band 60 W GaN Power Amplifier Product Features • Frequency Range: 2.9 – 3.5 GHz • Pout: > 48 dBm (at Pin = 24 dBm) • Large Signal Gain: > 24 dB (at Pin = 24 dBm) • PAE: > 54 % (at Pin = 24 dBm) • Bias: VD = 28 V, IDQ = 200 mA, VG = −2.8 V (Typ) • Package Dimensions: 7.00 x 7.00 x 0.85 mm General Description TriQuint’s TGA2817-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency. The TGA2817-SM can also support a variety of operating conditions to best support system requirements.
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