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TGA2622 - GaN Power Amplifier

Description

TriQuint’s TGA2622 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

10GHz and provides a superior combination of power, gain and efficiency.

Features

  • Frequency Range: 9.
  • 10GHz.
  • PSAT: 46dBm @ PIN = 18dBm.
  • P1dB: >40dBm.
  • PAE: >46% @ PIN = 18dBm.
  • Large Signal Gain: 28dB.
  • Small Signal Gain: 32dB.
  • Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical.
  • Pulsed VD: PW = 100us and DC = 10%.
  • Chip Dimensions: 5.0 x 4.86 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General.

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Datasheet Details

Part number TGA2622
Manufacturer TriQuint Semiconductor
File Size 517.15 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2622 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Weather and Marine Radar TGA2622 9 – 10GHz 40W GaN Power Amplifier Product Features  Frequency Range: 9 – 10GHz  PSAT: 46dBm @ PIN = 18dBm  P1dB: >40dBm  PAE: >46% @ PIN = 18dBm  Large Signal Gain: 28dB  Small Signal Gain: 32dB  Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical  Pulsed VD: PW = 100us and DC = 10%  Chip Dimensions: 5.0 x 4.86 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General Description TriQuint’s TGA2622 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2622 operates from 9 – 10GHz and provides a superior combination of power, gain and efficiency.
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