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TGA2612 - GaN LNA

Description

TriQuint’s TGA2612 is a broadband Low Noise Amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).

12GHz, the TGA2612 typically provides P1dB of 20dBm, greater than 22dB of small signal gain, 1.5dB noise figure (mid-band) and 29dBm OTOI.

Features

  • Frequency Range: 6.
  • 12GHz.
  • NF: < 1.8dB (1.5dB midband).
  • P1dB: 20dBm.
  • OTOI: 29dBm.
  • Small Signal Gain: >22dB.
  • Return Loss: >7dB.
  • Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical.
  • Chip Dimensions: 2.1 x 1.5 x 0.10mm Performance features are typical across frequency, under recommended bias and at 25°C carrier backside. Functional Block Diagram 2 J1 1 RF In 3 J2 RF Out 4 General.

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Datasheet preview – TGA2612

Datasheet Details

Part number TGA2612
Manufacturer TriQuint Semiconductor
File Size 477.18 KB
Description GaN LNA
Datasheet download datasheet TGA2612 Datasheet
Additional preview pages of the TGA2612 datasheet.

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Full PDF Text Transcription

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Applications  Commercial and Military Radar  Communications TGA2612 6-12 GHz GaN LNA Product Features  Frequency Range: 6–12GHz  NF: < 1.8dB (1.5dB midband)  P1dB: 20dBm  OTOI: 29dBm  Small Signal Gain: >22dB  Return Loss: >7dB  Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical  Chip Dimensions: 2.1 x 1.5 x 0.10mm Performance features are typical across frequency, under recommended bias and at 25°C carrier backside. Functional Block Diagram 2 J1 1 RF In 3 J2 RF Out 4 General Description TriQuint’s TGA2612 is a broadband Low Noise Amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 6–12GHz, the TGA2612 typically provides P1dB of 20dBm, greater than 22dB of small signal gain, 1.5dB noise figure (mid-band) and 29dBm OTOI.
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