TGA2583
TGA2583 is GaN Power Amplifier manufactured by TriQuint Semiconductor.
Features
- Frequency Range: 2.7
- 3.7GHz
- PSAT: 40.5d Bm at 25V
- PAE: 54%
- Small Signal Gain: 33d B
- Input Return Loss: >18d B
- Output Return Loss: >12d B
- Bias: VD = 25-32V (CW or Pulsed), IDQ = 175m A, VG
= -2.3V Typical
- Pulsed VD: PP = 1ms, DC = 10%
- Chip Dimensions: 3.0 x 1.9 x 0.10 mm
Functional Block Diagram
2 34
J1 RF In
J2 RF Out
General Description
Tri Quint’s TGA2583 is an S-band MMIC amplifier fabricated on Tri Quint’s production 0.25um Ga N on Si C process (TQGa N25). Covering 2.7-3.7GHz, the TGA2583 provides 10W of saturated output power and 33d B of small signal gain while achieving 54% poweradded efficiency. Higher power can be achieved at the expense of PAE by increasing the drain voltage.
The TGA2583 is ideal for phase array S-band radars and can support both short pulse and CW conditions.
Both RF ports have integrated DC blocking capacitors and are fully matched to 50ohms.
Lead-free and Ro HS pliant.
Pad Configuration
Pad No.
1 2 3, 5 4 6 7
Symbol
RF In VG1 VG2 VD1 VD2 RF Out
Ordering Information
Part
ECCN
EAR99
Description
- 3.7GHz 10W Ga N Power Amplifier
Preliminary Datasheet: Rev B 02-20-15 © 2014 Tri Quint
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- Disclaimer: Subject to change without notice
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