• Part: TGA2583
  • Description: GaN Power Amplifier
  • Manufacturer: TriQuint Semiconductor
  • Size: 538.78 KB
Download TGA2583 Datasheet PDF
TriQuint Semiconductor
TGA2583
TGA2583 is GaN Power Amplifier manufactured by TriQuint Semiconductor.
Features - Frequency Range: 2.7 - 3.7GHz - PSAT: 40.5d Bm at 25V - PAE: 54% - Small Signal Gain: 33d B - Input Return Loss: >18d B - Output Return Loss: >12d B - Bias: VD = 25-32V (CW or Pulsed), IDQ = 175m A, VG = -2.3V Typical - Pulsed VD: PP = 1ms, DC = 10% - Chip Dimensions: 3.0 x 1.9 x 0.10 mm Functional Block Diagram 2 34 J1 RF In J2 RF Out General Description Tri Quint’s TGA2583 is an S-band MMIC amplifier fabricated on Tri Quint’s production 0.25um Ga N on Si C process (TQGa N25). Covering 2.7-3.7GHz, the TGA2583 provides 10W of saturated output power and 33d B of small signal gain while achieving 54% poweradded efficiency. Higher power can be achieved at the expense of PAE by increasing the drain voltage. The TGA2583 is ideal for phase array S-band radars and can support both short pulse and CW conditions. Both RF ports have integrated DC blocking capacitors and are fully matched to 50ohms. Lead-free and Ro HS pliant. Pad Configuration Pad No. 1 2 3, 5 4 6 7 Symbol RF In VG1 VG2 VD1 VD2 RF Out Ordering Information Part ECCN EAR99 Description - 3.7GHz 10W Ga N Power Amplifier Preliminary Datasheet: Rev B 02-20-15 © 2014 Tri Quint - 1 of 15 - Disclaimer: Subject to change without notice .triquint....