Datasheet4U Logo Datasheet4U.com

TGA2576-FS - GaN Power Amplifier

Description

TriQuint’s TGA2576-FS is a packaged wideband power amplifier designed on TriQuint’s production 0.25 um GaN on SiC process.

Operating from 2.5 to 6 GHz, the TGA2576-FS achieves 40 W of saturated output power, greater than 35% power-added efficiency and 29 dB small signal gain.

Features

  • Frequency Range: 2.5 to 6 GHz.
  • PSAT: 46.5 dBm @ PIN = 26 dBm.
  • PAE: 35%.
  • Small Signal Gain: 29 dB.
  • Bias: Pulse VD = 30 V, IDQ = 1.55A, VG =.
  • 2.4 V Typ Pulse: PW = 150 us, DC = 5%.
  • Dimensions: 12.7 x 12.7 x 3.89 mm Functional Block Diagram General.

📥 Download Datasheet

Datasheet preview – TGA2576-FS

Datasheet Details

Part number TGA2576-FS
Manufacturer TriQuint Semiconductor
File Size 548.59 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2576-FS Datasheet
Additional preview pages of the TGA2576-FS datasheet.
Other Datasheets by TriQuint Semiconductor

Full PDF Text Transcription

Click to expand full text
Applications  Electronic Warfare  Radar  Test Instrumentation  EMC Amplifier TGA2576-FS 2.5 to 6GHz 40W GaN Power Amplifier Product Features  Frequency Range: 2.5 to 6 GHz  PSAT: 46.5 dBm @ PIN = 26 dBm  PAE: 35%  Small Signal Gain: 29 dB  Bias: Pulse VD = 30 V, IDQ = 1.55A, VG = −2.4 V Typ Pulse: PW = 150 us, DC = 5%  Dimensions: 12.7 x 12.7 x 3.89 mm Functional Block Diagram General Description TriQuint’s TGA2576-FS is a packaged wideband power amplifier designed on TriQuint’s production 0.25 um GaN on SiC process. Operating from 2.5 to 6 GHz, the TGA2576-FS achieves 40 W of saturated output power, greater than 35% power-added efficiency and 29 dB small signal gain.
Published: |