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TGA2576-FS Datasheet GaN Power Amplifier

Manufacturer: TriQuint Semiconductor

Overview: Applications  Electronic Warfare  Radar  Test Instrumentation  EMC Amplifier TGA2576-FS 2.

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Datasheet Details

Part number TGA2576-FS
Manufacturer TriQuint Semiconductor
File Size 548.59 KB
Description GaN Power Amplifier
Download TGA2576-FS Download (PDF)

General Description

TriQuint’s TGA2576-FS is a packaged wideband power amplifier designed on TriQuint’s production 0.25 um GaN on SiC process.

Operating from 2.5 to 6 GHz, the TGA2576-FS achieves 40 W of saturated output power, greater than 35% power-added efficiency and 29 dB small signal gain.

Both RF ports are fully matched to 50 Ω, the TGA2576FS is ideally suited to support both commercial and defense related opportunities.

Key Features

  • Frequency Range: 2.5 to 6 GHz.
  • PSAT: 46.5 dBm @ PIN = 26 dBm.
  • PAE: 35%.
  • Small Signal Gain: 29 dB.
  • Bias: Pulse VD = 30 V, IDQ = 1.55A, VG =.
  • 2.4 V Typ Pulse: PW = 150 us, DC = 5%.
  • Dimensions: 12.7 x 12.7 x 3.89 mm Functional Block Diagram General.

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