TGA2576-FL Datasheet | TriQuint Semiconductor

Features - - - - - - Frequency Range: 2.5 - 6 GHz Psat: 45.5 d Bm @ Pin = 26 d Bm PAE: 35 % Small Signal Gain: 26 d B Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical Dimensions: 11.4 x 17.3 x 3.0 mm Functional Block Diagram 1 2 10 9 4 5 .Data Sheet.net/ 7 6 General Description Tri Quint’s TGA2576-FL is a packaged wideband power amplifier fabricated on Tri Quint’s production-released 0.25um Ga N on Si C process. Operating from 2.5 GHz to 6 GHz, it achieves 45.5 d Bm saturated output power, 35% PAE and 26 d B small signal gain. Fully matched to 50 ohms and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both mercial and defense related opportunities. Pin out Configuration Pin # 1,5 2,4,7,9 3 6 8 10 Symbol Vg NC RF In Vd Bot RF Out Vd Top Ordering Information Part No. ECCN 3A001.b.2.a Description 2.5-6 GHz Power Amplifier Preliminary Data Sheet: Rev A 08/25/11 - 1 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® © 2011 Tri Quint Semiconductor, Inc. Datasheet pdf - http://..co.kr/ 2.5 to 6 GHz Ga N HEMT Power Amplifier Specifications Absolute Maximum Ratings Parameter Drain to Gate Voltage, Vd - Vg Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature Remended Operating Conditions Parameter Vd Idq Id_drive (Under RF Drive)...