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TGA2573 - 2-18 GHz 10 Watt GaN Amplifier

Description

TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts.

Features

  • Frequency Range: 2.
  • 18 GHz.
  • Psat: 40.0 dBm at Vd=30 V.
  • PAE: 25% typical.
  • Small Signal Gain: 9 dB.
  • Return Loss: 15 dB.
  • Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical.
  • Technology: 0.25 µm GaN on SiC.
  • Dimensions: 2.55 x 5.54 x 0.1 mm General.

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Datasheet Details

Part number TGA2573
Manufacturer TriQuint Semiconductor
File Size 568.33 KB
Description 2-18 GHz 10 Watt GaN Amplifier
Datasheet download datasheet TGA2573 Datasheet
Additional preview pages of the TGA2573 datasheet.

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Full PDF Text Transcription

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TGA2573 2-18 GHz 10 Watt GaN Amplifier Applications • Military Radar • Communications • Electronic warfare • Electronic counter measures • Test Equipment Product Features • Frequency Range: 2 – 18 GHz • Psat: 40.0 dBm at Vd=30 V • PAE: 25% typical • Small Signal Gain: 9 dB • Return Loss: 15 dB • Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical • Technology: 0.25 µm GaN on SiC • Dimensions: 2.55 x 5.54 x 0.1 mm General Description TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts.
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