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TGA2573
2-18 GHz 10 Watt GaN Amplifier
Applications
• Military Radar • Communications • Electronic warfare • Electronic counter measures • Test Equipment
Product Features
• Frequency Range: 2 – 18 GHz • Psat: 40.0 dBm at Vd=30 V • PAE: 25% typical • Small Signal Gain: 9 dB • Return Loss: 15 dB • Bias: Vd = 30 V, Idq = 500 mA,
Vg = -3.4 V typical • Technology: 0.25 µm GaN on SiC • Dimensions: 2.55 x 5.54 x 0.1 mm
General Description
TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts.
TGA2573 Datasheet
