TGA2573 Datasheet | TriQuint Semiconductor

Features - Frequency Range: 2 - 18 GHz - Psat: 40.0 d Bm at Vd=30 V - PAE: 25% typical - Small Signal Gain: 9 d B - Return Loss: 15 d B - Bias: Vd = 30 V, Idq = 500 m A, Vg = -3.4 V typical - Technology: 0.25 µm Ga N on Si C - Dimensions: 2.55 x 5.54 x 0.1 mm General Description Tri Quint’s TGA2573 is a wideband, high power Ga N HEMT amplifier fabricated on Tri Quint’s production 0.25um Ga N on Si C process. Operating from 2 to 18 GHz, it achieves 40 d Bm saturated output power, 25% PAE and 9 d B small signal gain at a drain bias of 30 volts. Fully matched to 50 ohms and with integrated DC blocking caps on both RF ports, the TGA2573 is ideally suited to support both mercial and defense related applications. The TGA2573 is 100% DC and RF tested on-wafer to ensure pliance to performance specifications. Lead-free and Ro HS pliant Functional Block Diagram Vg 4 RF In 1 RF 3 Out Vd Bond Pad Configuration Bond Pad # 1 2 3 4 Symbol RF In Vd RF Out Vg Ordering Information Part No. ECCN XI(c) Description Ga N on Si C Die The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited. Preliminary Data Sheet: Rev. A 6/23/11 © 2011 Tri Quint Semiconductor, Inc. - 1 of 16 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® 2-18 GHz 10 Watt Ga N Amplifier Specifications...