TGA2573 Overview
TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts. Fully matched to 50 ohms and with integrated DC blocking caps on both RF ports, the TGA2573 is ideally suited to support both mercial and defense related...
TGA2573 Key Features
- Frequency Range: 2
- 18 GHz
- Psat: 40.0 dBm at Vd=30 V
- PAE: 25% typical
- Small Signal Gain: 9 dB
- Return Loss: 15 dB
- Bias: Vd = 30 V, Idq = 500 mA
- Technology: 0.25 µm GaN on SiC
- Dimensions: 2.55 x 5.54 x 0.1 mm