0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm
Primary.
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Advance Product Information
2 -20 GHz Wideband AGC Amplifier
TGA1342-EPU
Key Features and Performance
• • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm
Primary Applications
• • Typical Electrical Characteristics
S21 Gain (dB) VD=5v Id=60ma Temp=25C 12.0 Gain (dB) 10.0 8.0 6.0 4.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Input Return Loss (dB) 0.0 -10.0 -20.0 -30.0 -40.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) S11 Input Return Loss (dB) VD=5v Id=60ma Temp=25C
Wideband Gain Block Amplifier Wideband Low Noise Amplifier
Noise Figure (dB) VD=6v Id=60ma Temp=25C Output Return Loss (dB) 6.0 5.0 4.0 3.0 2.0 1.0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 0.0 -10.0 -20.0 -30.0 -40.
TGA1342-EPU Datasheet
