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TriQuint Semiconductor
TriQuint Semiconductor

TAT7472A1F Datasheet Preview

TAT7472A1F Datasheet

Dual RF Amplifier

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TAT7472A1F pdf
Applications
Edge QAM Gain Stage
MDU Output
RF Distribution Amplifiers
AH22 Replacement
Product Features
75 Ω, 50 MHz to 1218 MHz Bandwidth
Low Noise Figure: <3dB
pHEMT Device Technology
SOIC-8 Package
Enhanced Gain and Bandwidth
Adjustable Bias
General Description
The TAT7472A1F is a 75 Ω RF Amplifier designed for
CATV use, but capable of operation up to 1218MHz.
The TAT7472 A1F contains two separate amplifiers for
push pull applications. It is fabricated using 6-inch GaAs
pHEMT technology to optimize performance and cost.
Each amplifier contains on-chip active biasing. The bias
current set point of each amplifier is adjustable with a
single resistor from the input to ground.
Typical supply voltage is +5V, IMD performance and
bandwidth can be enhanced with +5.5V and +6V
operation.
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
SOIC-8 Package
Functional Block Diagram
Pin 1 Reference Mark
RFIN / VG A 1
GNDN/C 2
GNDN/C 3
RFIN / VG B 4
A
B
8 RFOUT / VDD A
7 N/CGND
6 N/CGND
5 RFOUT / VDD B
Backside Pad - RF/DC GND
Pin Configuration
Pin No.
1
2, 3, 6, 7
4
5
8
Backside Pad
Label
RFIN/ VG A
GND
RFIN / VG B
RFOUT/ VDD B
RFOUT/ VDD A
RF/DC GND
Datasheet: Rev D 06-08-15
© 2014 TriQuint
Ordering Information
Part No.
Description
TAT7472A1F
75 Ω Dual pHEMT Amplifier
TAT7472A1F-EB 50 – 1218MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com



TriQuint Semiconductor
TriQuint Semiconductor

TAT7472A1F Datasheet Preview

TAT7472A1F Datasheet

Dual RF Amplifier

No Preview Available !

TAT7472A1F pdf
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
Rating
−55 to 150°C
Device Voltage (VDD)
+8V
Total Device Current (IDD=IDDA+IDDB)
400 mA
Device Current per Amp (IDDA or IDDB)
200 mA
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min Typ Max Units
Device Voltage (VDD)
Device Current (IDD)
Case Temperature
5.0 V
270 320 370 mA(†)
40 +85 °C
Tj for 106 hours MTTF
+150 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications − Single Ended in 50 Ohms
Test conditions unless otherwise noted: VCC = +5 V, Temp = +25 °C, 50 Ω System
Parameter
Conditions
Min
Operational Frequency Range
50
Test Frequency
Gain
Output IP3
Pout=5dBm/tone, ∆f=10 MHz,
800MHz
Device Current (IDDA or IDDB)
135
Typ
800
18
+40
163
Max
1200
185
Units
MHz
MHz
dB
dBm
mA
Typical Performance Push-Pull Configuration in 75 Ohms
Test conditions unless otherwise noted: VCC = +5 V, Temp.= +25 °C, 75 Ω System.
Parameter
Conditions
Typical Value
Frequency
50 250 450 860
Gain
15 15 15 15.4
Input Return Loss
22 25 23 16
Output Return Loss
CTB
CSO
CCN
Output P1dB
Output IP3
ACPR
+41 dBmV / channel
80 channels + 108 QAM,
Flat Loading.
270mA<IDD<320mA
Pout= +8dBm/ tone, Δf=10 MHz
62dBmV output, 1ch
20
78
82
68.5
+24.5
+45
69
22
76
83
67.5
+24.5
+45
68
21
74
80
65
+24.7
+45
67.5
16
-
-
-
+24.5
+44
64
Noise Figure
2.2 2.3 2.4 2.5
Total Device Current, IDD
Thermal Resistance, θjb(1) Junction to base
320
15
Notes:
1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle
2. Improves with higher Vdd see performance plots on page 7
1210
15.4
15
13
-
-
-
23.5
+40(2)
58(2)
2.7
Units
MHz
dB
dB
dB
dBc
dBc
dBc
dBm
dBm
dBc
dB
mA
°C/W
Datasheet: Rev D 06-08-15
© 2014 TriQuint
- 2 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number TAT7472A1F
Description Dual RF Amplifier
Maker TriQuint Semiconductor
Total Page 8 Pages
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