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T1G6003028-FS - DC-6GHz GaN RF Power Transistor

Description

The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

Features

  • Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 2 www. DataSheet. net/ General.

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Datasheet Details

Part number T1G6003028-FS
Manufacturer TriQuint Semiconductor
File Size 1.31 MB
Description DC-6GHz GaN RF Power Transistor
Datasheet download datasheet T1G6003028-FS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features • • • • • Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 2 www.DataSheet.net/ General Description The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
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