T1G6003028-FS datasheet, transistor equivalent, TriQuint Semiconductor

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Features and benefits

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* Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance packag.

Application

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* Military radar Civilian radar Professional and military radio communications Test i.

Description

The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at.

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