T1G6003028-FS Datasheet | TriQuint Semiconductor

30W, 28V, DC - 6 GHz, Ga N RF Power Transistor Applications - - - - - - Military radar Civilian radar Professional and military radio munications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features - - - - - Frequency: DC to 6 GHz Output Power (P3d B): 30 W at 6 GHz Linear Gain: >14 d B at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram .Data Sheet.net/ General Description The Tri Quint T1G6003028-FS is a 30 W (P3d B) discrete Ga N on Si C HEMT which operates from DC to 6 GHz. The device is constructed with Tri Quint’s proven 0.25 µm process, which Features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and Ro HS pliant Evaluation Boards are available upon request. Pin Configuration Pin # 1 2 Flange Symbol Vd/RF OUT Vg/RF IN Source Ordering Information Material No. 1080206 1093989 Part No. T1G6003028-FS T1G6003028-FSEVB1 Description Packaged part: Flangeless 5.4-5.9 GHz Eval. Board ECCN EAR99 EAR99 Data Sheet: Rev A 05/23/2012 © 2012 Tri Quint Semiconductor, Inc. - 1 of...