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TriQuint Semiconductor

T1G6003028-FS Datasheet Preview

T1G6003028-FS Datasheet

DC-6GHz GaN RF Power Transistor

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T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
Military radar
Civilian radar
Professional and military radio
communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Frequency: DC to 6 GHz
Output Power (P3dB): 30 W at 6 GHz
Linear Gain: >14 dB at 6 GHz
Operating Voltage: 28 V
Low thermal resistance package
Functional Block Diagram
1
www.DataSheet.net/
2
General Description
The TriQuint T1G6003028-FS is a 30 W (P3dB)
discrete GaN on SiC HEMT which operates
from DC to 6 GHz. The device is constructed
with TriQuint’s proven 0.25 µm process, which
features advanced field plate techniques to
optimize power and efficiency at high drain
bias operating conditions. This optimization
can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal
management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Material No. Part No.
1080206
T1G6003028-FS
1093989
T1G6003028-FS-
EVB1
Description
Packaged part:
Flangeless
5.4-5.9 GHz
Eval. Board
ECCN
EAR99
EAR99
Data Sheet: Rev A 05/23/2012
© 2012 TriQuint Semiconductor, Inc.
- 1 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

T1G6003028-FS Datasheet Preview

T1G6003028-FS Datasheet

DC-6GHz GaN RF Power Transistor

No Preview Available !

T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage, Vd
Gate Voltage, Vg
Drain to Gate Voltage, Vd – Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss (CW)
Power Dissipation, Pdiss
(Pulse)
RF Input Power, CW, T = 25ºC
at 5.6 GHz
Channel Temperature, Tch
Storage Temperature
Rating
+40 V
-50 to 0 V
80 V
2.5 A
-25 to 25 mA
30 W
40 W
33.15 dBm
205 oC
-40 to 150 oC
Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied.
Recommended Operating Conditions
Parameter
Min Typical Max Units
Vd 28 30 V
Idq 200 mA
Id (Peak Current)
2500
mA
Vg -3.6 V
Channel
Temperature, Tch
205 oC
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Recommended operating conditions apply unless otherwise specified: TA = 25 °C, Vd = 28 V, Idq = 200 mA, Vg = -3.6 V
RF Characteristics
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Characteristics
Symbol Min Typ Max Units
Load Pull Performance at 3.0 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%)
Linear Gain
GLIN
15.2 dB
Output Power at 3 dB Gain Compression
P3dB
33.5 W
Drain Efficiency at 3 dB Gain Compression
DE3dB
68.2 %
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
64.1 %
Gain at 3 dB Compression
G3dB
12.2 dB
Load Pull Performance at 6.0 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%)
Linear Gain
GLIN
14.5 dB
Output Power at 3 dB Gain Compression
P3dB
33.0 W
Drain Efficiency at 3 dB Gain Compression
DE3dB
50.0 %
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
46.5 %
Gain at 3 dB Compression
G3dB
11.5 dB
Performance at 5.60 GHz in the 5.4 to 5.9 GHz Eval. Board (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%)
Linear Gain
GLIN
12.0 14.0
dB
Output Power at 3 dB Gain Compression
P3dB
22.5 32.5
W
Drain Efficiency at 3 dB Gain Compression
DE3dB
45.0 50.0
%
Gain at 3 dB Compression
G3dB
9.0 11.0
dB
Narrow Band Performance at 5.60 GHz (VDS = 28 V, IDQ = 200 mA, CW at P1dB)
Impedance Mismatch Ruggedness
VSWR
10:1
Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z.
Data Sheet: Rev A 05/23/2012
© 2012 TriQuint Semiconductor, Inc.
- 2 of 11-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number T1G6003028-FS
Description DC-6GHz GaN RF Power Transistor
Maker TriQuint Semiconductor
Total Page 13 Pages
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