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T1G6001528-Q3 - GaN RF Power Transistor

Description

The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.

Features

  • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 www. DataSheet. net/ 2 General.

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Datasheet Details

Part number T1G6001528-Q3
Manufacturer TriQuint Semiconductor
File Size 662.56 KB
Description GaN RF Power Transistor
Datasheet download datasheet T1G6001528-Q3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features • • • • • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 www.DataSheet.net/ 2 General Description The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.
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