T1G6001032-SM
Overview
The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
- Frequency: DC to 6 GHz
- Output Power (P3dB): 10 W Peak at 3.1 GHz
- Linear Gain: >17 dB at 3.1 GHz
- Operating Voltage: 32 V
- Low thermal resistance package Functional Block Diagram
