T1G6001032-SM Datasheet | TriQuint Semiconductor

Features - Frequency: DC to 6 GHz - Output Power (P3d B): 10 W Peak at 3.1 GHz - Linear Gain: >17 d B at 3.1 GHz - Operating Voltage: 32 V - Low thermal resistance package Functional Block Diagram General Description The Tri Quint T1G6001032-SM is a 10 W (P3d B) discrete Ga N on Si C HEMT which operates from DC to 6 GHz. The device is constructed with Tri Quint’s proven TQGa N25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS pliant Evaluation boards are available upon request. Pin Configuration Pin No. 18, 19, 20, 21, 22, 23 2, 3, 4, 5, 6, 7 33 1, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 24, 25, 26, 27, 28, 29, 30, 31, 32 Label VD / RF OUT VG / RF IN Source Not Connected Ordering Information Part ECCN T1G6001032-SM EAR99 T1G6001032-SMEVB1 EAR99 Description Pack...