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FP2189 - 1 Watt GaAs HFET

Description

The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package.

Features

  • 50.
  • 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package.
  • MTTF >100 Years Product.

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Datasheet Details

Part number FP2189
Manufacturer TriQuint Semiconductor
File Size 774.41 KB
Description 1 Watt GaAs HFET
Datasheet download datasheet FP2189 Datasheet

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Full PDF Text Transcription (Reference)

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FP2189 1-Watt HFET Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components.
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