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TriQuint Semiconductor

FH101 Datasheet Preview

FH101 Datasheet

GaAs MESFET

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FH101
High Dynamic Range FET
Product Features
Product Description
Functional Diagram
50 – 4000 MHz
18 dB Gain
+18 dBm P1dB
+36 dBm OIP3
Low Noise Figure
Single or Dual Supply Operation
MTTF > 100 years
Lead free/green/RoHS-compliant
SOT-89 Package
Applications
Mobile Infrastructure
CATV / DBS
WLAN / ISM
Defense / Homeland Security
The FH101 is a high dynamic range FET packaged in a
low-cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85°C. The FH101 is available
in the environmentally friendly lead-free/green/RoHS-
compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH101 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
4
12 3
Function
Gate
Drain
Source
Pin No.
1
3
2, 4
Specifications (1)
Typical Performance (6)
DC Electrical Parameter
Saturated Drain Current, Idss (2)
Transconductance, Gm
Pinch-off Voltage, Vp (3)
Units
mA
mS
V
Min
100
-3
Typ
140
120
-1.5
Max
170
RF Parameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3 (4)
P1dB
Minimum Noise Figure (5)
Drain Bias
Gate Bias
Units
MHz
MHz
dB
dB
dBm
dBm
dB
V
V
Min Typ Max
50 – 4000
800
17 18
23
+32 +36
+18
0.77
+5
0
1. DC and RF parameters are measured under the following conditions unless otherwise noted:
25°C with Vds = 5V, Vgs = 0V, in a 50 system.
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has GS = GL = GOPT.
Parameter
Frequency
S21
S11
www.DataSheet.net/
S22
Output P1dB
Output IP3 (4)
Noise Figure
Drain Bias
Gate Voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
Typical
900 1960 2140
19 16.5 16.5
-11 -20 -22
-10 -9
-9
+18.8 +18.1 +19.1
+36 +36 +36
2.7 3.1 3.0
5V @ 140mA
0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
Absolute Maximum Rating
Parameter
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
RF Input Power (continuous)
Thermal Resistance, Rth
Junction Temperature
Rating
-55 to +150 °C
+7 V
-6 V
4.5 mA
4 dB above Input P1dB
59 °C/W
+160 °C
Ordering Information
Part No.
FH101-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 1 of 7 June 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/




TriQuint Semiconductor

FH101 Datasheet Preview

FH101 Datasheet

GaAs MESFET

No Preview Available !

FH101
High Dynamic Range FET
Typical Device Data
Data is shown at a biasing configuration of VDS = +5 V, IDS = 140 mA, 25 °C for the unmatched device in a 50 ohm system)
Gain and Max. Stable Gain
24
DB(|S(2,1)|)
22 DB(GMax())
20
18
S11
Swp Max
6GHz
3.0
4.0
5.0
10.0
S22
Swp Max
6GHz
3.0
4.0
5.0
10.0
16
14 -0.2
-0.2
12 -0.4 -0.4
0123
Frequency (GHz)
Swp Min
0.01GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it
is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The
impedance plots are shown from 10 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments.
Swp Min
0.01GHz
45
40
35
30
25
-40
Output IP3 vs. Temperature
Output IP3 vs. Output Power
45
40
Noise Figure vs. Frequency
2.5
NF (unmatched device)
2 Minimum NF
1.5
35
1
5V 100% Idss
30
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5V 100% Idss
0.5
25 0
-15 10 35 60 85
0 2 4 6 8 10 12
0.5
Temperature (°C)
Output Power per tone (dBm)
1 1.5
Frequency (GHz)
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
S-Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 °C, calibrated to device leads)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
0.00
-4.08
19.36
176.06
-51.05
87.96
-4.38
-0.13
-19.64
19.19
164.65
-37.15
78.37
-4.52
-0.34
-39.41
18.85
150.19
-31.34
66.75
-4.77
-0.55
-58.33
18.47
136.21
-28.24
55.74
-5.19
-0.83
-75.93
17.95
123.24
-26.22
45.25
-5.77
-1.16
-93.29
17.47
110.92
-24.88
35.22
-6.44
-1.50
-110.36
16.82
99.18
-23.95
26.69
-7.14
-1.80
-125.64
16.21
88.19
-23.27
18.17
-7.94
-2.03
-140.92
15.65
77.53
-22.81
9.87
-8.84
-2.25
-155.64
15.05
67.15
-22.39
2.11
-9.57
-2.37
-169.80
14.42
57.62
-22.25
-4.68
-10.43
-2.55
177.26
13.74
48.11
-22.08
-11.35
-11.43
-2.62
165.93
13.18
39.86
-22.01
-17.16
-12.30
S22 (ang)
-3.34
-11.51
-22.43
-33.05
-43.46
-53.09
-61.08
-69.92
-78.43
-86.41
-93.92
-101.88
-108.95
2
Noise Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 °C, calibrated to device leads)
Freq (MHz)
NF,min (dB) MagOpt (mag) AngOpt (deg)
Rn
700 0.51 0.574 32.8 0.403
800 0.77 0.535 37.4 0.409
900 0.66 0.508 44.1 0.379
1000 0.74 0.488 50.4 0.365
1100 0.85 0.463 56.4 0.357
1200 0.85 0.458 62.0 0.345
1300 0.95 0.446 67.3 0.335
1400 1.07 0.450 73.3 0.323
Device S-parameters and noise are available for download from the website at: http://www.wj.com
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8902 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 7 June 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number FH101
Description GaAs MESFET
Maker TriQuint Semiconductor
Total Page 7 Pages
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