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CGB240 - 2-Stage Bluetooth InGaP HBT Power Amplifier

Description

The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g.

Bluetooth class 1).

Its high power added efficiency and single positive supply operation makes the device ideally suited to handheld applications.

Features

  • Single voltage supply.
  • Wide operating voltage range 2.0 - 5.5 V.
  • POUT = 23 dBm at VC = 3.2 V.
  • Overall power added efficiency (PAE) typically 50%.
  • High PAE at low.
  • power mode.
  • Analog power control with four power steps.
  • Straight-Forward Matching; Few external components. Package Outline: 1 5 SOP-10-2 TSMSOP-10 Pin Configuration: 1 & 2: 3: 4, 5, & 10: 6: 7: 8 & 9: 11 (Paddle): Vc1 RF In NC Vcntrl1 Vcntrl2 Vc2 GND Fo.

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Datasheet Details

Part number CGB240
Manufacturer TriQuint Semiconductor
File Size 320.94 KB
Description 2-Stage Bluetooth InGaP HBT Power Amplifier
Datasheet download datasheet CGB240 Datasheet

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Other Datasheets by TriQuint Semiconductor

Part Number Description
CGB240B 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
CGB241 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

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CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its high power added efficiency and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 23 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications. For WLAN applications (IEEE802.
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