AGR21180EF Description
AGR21180EF 180 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Thermal Characteristics Parameter , Junction to Case Sym Rı JC...
AGR21180EF Key Features
- 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1
- 10 MHz and F2 + 10 MHz. Typical peak-to-average (P/A) ratio of 8.5 dB at 0.01% (probability) CCDF
- Output power: 38 W
- Power gain: 14 dB
- Efficiency: 26%
- IM3: -36 dBc
- ACPR: -39 dBc
- Stresses in excess of the