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TPH3208P - 650V GaN FET

General Description

The TPH3208P Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices.

offering superior reliability and performance.

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust de.

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Datasheet Details

Part number TPH3208P
Manufacturer Transphorm
File Size 1.36 MB
Description 650V GaN FET
Datasheet download datasheet TPH3208P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPH3208P Series 650V GaN FET TO-220 Series Description The TPH3208P Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.