TPH3205WSB - 650V GaN FET

General Description

The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Key Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.

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TPH3205WSB 650v gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TPH3205WSB
Manufacturer	Transphorm
File Size	1.25 MB
Description	650V GaN FET
Datasheet	TPH3205WSB Datasheet

Other Datasheets by Transphorm

Part Number	Description
TPH3205WS	600V Cascode GaN FET
TPH3205ESBET	650V GaN FET
TPH3202L	600V GaN FET
TPH3202P	600V GaN FET
TPH3206L	650V GaN FET
TPH3206PD	600V GaN FET
TPH3206PS	600V Cascode GaN FET
TPH3206PSB	650V GaN FET
TPH3207WS	650V GaN FET
TPH3208L	650V GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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650V GaN FET in TO-247 (source tab) TPH3205WSB Not recommended for new designs—see TP65H050WS Description The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.