TPH3205WSB datasheet, fet equivalent, Transphorm

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Features and benefits

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Intrinsic lifetime tests .

Description

The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved.

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