TPH3202P fet equivalent, 600v gan fet.
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Intrinsic lifetime tests — Wide gate safety .
The TPH3202P Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers .
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