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TPH3202L - 600V GaN FET

Description

The TPH3202L Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devices.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetim.

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Datasheet Details

Part number TPH3202L
Manufacturer Transphorm
File Size 1.53 MB
Description 600V GaN FET
Datasheet download datasheet TPH3202L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPH3202L Series—Discontinued 600V GaN FET PQFN Series Description The TPH3202L Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
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