TP90H180PS - 900V GaN FET

General Description

The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Key Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS complian.

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TP90H180PS 900v gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TP90H180PS
Manufacturer	Transphorm
File Size	1.27 MB
Description	900V GaN FET
Datasheet	TP90H180PS Datasheet

Other Datasheets by Transphorm

Part Number	Description
TP90H050WS	900V GaN FET

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TP90H180PS 900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.