TC2591 fets equivalent, 1 w flange ceramic packaged phemt gaas power fets.
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* 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typica.
include high dynamic range power amplifiers for commercial and military high performance power applications.
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The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent qualit.
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