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TC2591 - 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

TC2591 Description

TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs .
The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

TC2591 Features

* 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Rel

TC2591 Applications

* include high dynamic range power amplifiers for commercial and military high performance power applications. www. DataSheet4U. com ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA

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Datasheet Details

Part number
TC2591
Manufacturer
Transcom
File Size
105.00 KB
Datasheet
TC2591_Transcom.pdf
Description
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

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Flange Ceramic Packaged PHEMT GaAs Power FETs Transcom
Transcom TC2591-like datasheet