TTA007 Overview
Key Features
- High DC current gain : hFE = 200 to 500 (IC = -0.1 A)
- Low collector-emitter saturation voltage : VCE(sat) = -0.2 V (max)
| Part | TTA007 |
|---|---|
| Description | Silicon PNP Transistor |
| Category | Transistor |
| Manufacturer | Toshiba |
| Size | 199.97 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| TTA004B | Toshiba | Silicon PNP Epitaxial Type Bipolar Transistors |
| TTA004 | Toshiba | Silicon PNP Epitaxial Type Transistor |
| TTA0002 | Inchange Semiconductor | PNP Transistor |
| TTA0001 | Inchange Semiconductor | PNP Transistor |
| TTA005 | Toshiba | Silicon PNP Epitaxial Type Bipolar Transistors |