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TPCT4203 - N-Channel MOSFET

Features

  • once. 7 2008-12-27 TPCT4203 Note12:(1) 【Mechanical stress】 The TPCT4203 is very small and.

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TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCT4203 Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.) z High forward transfer admittance: |Yfs| = 18 S (typ.) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA) z Common drain Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Source-source voltage VSSS 20 V Gate-source voltage VGSS ±12 V DC Source current Pulse (Note 1) (Note 1) IS ISP 6 A 24 Power dissipation (t = 10 s) (Note 2a, 3) PD 1.47 W Power dissipation (t = 10 s) (Note 2b, 3) PD 0.
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