Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.) z High forward transfer admittance: |Yfs| = 18 S (typ.) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA) z mon...