TPCT4203
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.) z High forward transfer admittance: |Yfs| = 18 S (typ.) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA) z mon drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Source-source voltage
VSSS 20 V
Gate-source voltage
VGSS ±12 V
DC Source current
Pulse
(Note 1) (Note 1)
IS ISP
6 A
Power dissipation (t = 10 s)
(Note 2a, 3)
1.47 W
Power dissipation (t = 10 s)
(Note 2b, 3)
0.47 W
Single-pulse avalanche energy (Note 4)
Avalanche current Repetitive avalanche energy
(Note 2a, 5)
Channel temperature
Storage temperature range
EAS IAR EAR Tch Tstg
46.8 6
0.058 150
- 55 to 150 m J A m J °C °C
Note: Using continuously...
