TPCP8206 Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (ma.

* Mobile Equipments 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on.

TPCP8201

TPCP8202

TPCP8203

TPCP8204

TPCP8205-H

TPCP8207

TPCP8001-H

TPCP8002

TPCP8003-H

TPCP8004

TPCP8005-H

TPCP8006

TPCP8007-H