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TPCC8103 - Noteboook PC Applications Portable Eqipment Applications

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  • unction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own.

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Part number TPCC8103
Manufacturer Toshiba Semiconductor
File Size 280.47 KB
Description Noteboook PC Applications Portable Eqipment Applications
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TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8103 Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) (VGS = −10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −18 −54 27 1.9 www.DataSheet.
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