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TPCC8102
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ)
TPCC8102
Notebook PC Applications Portable Equipment Applications
• • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating -30 -30 ±20 -15 -45 26 1.9
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TPCC8102 Datasheet
