TPCC8102 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) Notebook PC Applications Portable Equipment Applications - - - - Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating -30 -30 ±20 -15 -45 26 1.9 .Data Sheet.net/ Unit V V V A W W W m J A m J °C °C 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Drain power dissipation 0.7 59 -15 1.18 150 -55 to 150 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Weight: 0.02 g (typ.) Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration 8 7 6 5 2009-08-06 Datasheet pdf - http://..co.kr/ Thermal Characteristics Characteristic Thermal resistance, channel to...