Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
High-Side Switching Applications Motor Drive Applications
- Small footprint due to small and thin package
- Low drain-source ON-resistance: RDS (ON) = 7.7 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 41S (typ.)
- Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 40 V)
- Enhancement mode: Vth =
- 1.5 to
- 3.0 V (VDS =
- 10 V, ID =
- 1...