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TPCA8108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TPCA8108
High-Side Switching Applications Motor Drive Applications
• Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 41S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) • Enhancement mode: Vth = −1.5 to −3.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
0.5±0.1 1.27 0.4±0.1
8
5
Unit: mm
0.05 M A
6.0±0.3 5.0±0.2
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A 0.166±0.
TPCA8108 Datasheet
