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TPCA8105
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8105
Notebook PC Applications Portable Equipment Applications
• Small footprint due to compact and slim package • Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.)
(VGS = − 4.5V） • High forward transfer admittance :|Yfs| = 14 S (typ.) • Low leakage current : IDSS = −10 μA (VDS = −12 V) • Enhancement mode
: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA )
0.5±0.1 1.27 8
0.4±0.1 5
Unit: mm
0.05 M A
6 .0 ± 0 .3 5 .0 ± 0 .2
0.15±0.05
0.95±0.05
1
4
5 .0 ± 0 .2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0 .6 ± 0 .1 3 .5 ± 0 .2
4.25±0.2
Absolute Maximum Ratings (Ta = 25°C)
8
5 0.8±0.
TPCA8105 Datasheet
