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TPCA8104
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8104
High-Side Switching Applications Portable Equipment Applications
• Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance:|Yfs| = 50 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
0.5±0.1 1.27 8
0.4±0.1 5
Unit: mm
0.05 M A
6 .0 ± 0 .3 5 .0 ± 0 .2
0.15±0.05
0.95±0.05
1
4
5 .0 ± 0 .2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0 .6 ± 0 .1 3 .5 ± 0 .2
Absolute Maximum Ratings (Ta = 25°C)
4.25±0.2
Characteristic
Symbol
Rating
Unit
8
5 0.8±0.
TPCA8104 Datasheet
