TPCA8103 - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Datasheet Summary

Features

mputer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These.

Toshiba Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	TPCA8103
Manufacturer	Toshiba Semiconductor
File Size	280.62 KB
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Datasheet	TPCA8103 Datasheet
Additional preview pages of the TPCA8103 datasheet.

📁 Similar Datasheet

TPCA8120 - Silicon P-Channel MOSFET (Toshiba)
TPCA8121 - Field Effect Transistor (Toshiba)
TPCA8131 - Silicon P-Channel MOSFET (Toshiba)
TPCA8019-H - MOSFET (TOSHIBA)
TPCA8030-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8036-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8040-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8042 - Silicon N-Channel MOSFET (Toshiba)
TPCA8045-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8046-H - Silicon N-Channel MOSFET (Toshiba)

Other Datasheets by Toshiba Semiconductor

TPCA8102 - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TPCA8104 - Silicon P-Channel MOSFET
TPCA8105 - Silicon P-Channel MOSFET
TPCA8106 - Silicon P-Channel MOSFET
TPCA8107-H - Silicon P-Channel MOSFET
TPCA8108 - Silicon P-Channel MOSFET
TPCA8109 - Silicon P Channel MOS Type
TPCA8128 - Silicon P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.5±0.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A 5.0±0.

Published: Nov 27, 2006 |