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TPCA8102 Datasheet Toshiba Semiconductor

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Toshiba Semiconductor · TPCA8102 File Size : 208.58KB · 1 hits

Features and Benefits

wer dissipation Weight: 0.076 g (typ.) 1.6 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 208 − 40 4.5 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 EAR Tch Tstg Note: For (Not.

TPCA8102 TPCA8102 TPCA8102
TAGS
TOSHIBA
Field
Effect
Transistor
Silicon
Channel
MOS
Type
TPCA8102
TPCA8103
TPCA8104
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