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TPC8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)
TPC8102
Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −6 −24 2.4 1.0 47 −6 0.
TPC8102 Datasheet
