TPC8018-H
TPC8018-H is Silicon N-Channel MOS Type Field Effect Transistor manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Speed and High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 12 n C (typ.)
- Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.)
- High forward transfer admittance: |Yfs| =50 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation
(t = 10 s) (Note 2a)
Drain power dissipation
(t = 10 s) (Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD
EAS IAR EAR
Tch Tstg
Rating 30 30 ±20 18 72 1.9
210 18 0.19 150
- 55 to 150
Unit V V V A
W m J A m J °C...
