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TPC8018-H - Silicon N-Channel MOS Type Field Effect Transistor

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Datasheet Details

Part number TPC8018-H
Manufacturer Toshiba
File Size 466.36 KB
Description Silicon N-Channel MOS Type Field Effect Transistor
Datasheet download datasheet TPC8018-H Datasheet

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TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 12 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.) • High forward transfer admittance: |Yfs| =50 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.