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TPC8018-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8018-H
High-Speed and High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Unit: mm
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 12 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.) • High forward transfer admittance: |Yfs| =50 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.