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TPC6111
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
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TPC6111
Notebook PC Applications Portable Equipment Applications
• • • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −5.5 −22 2.2 0.7 5.1 −2.8 0.
TPC6111 Datasheet
